| PART |
Description |
Maker |
| IRHLF77110 IRHLF73110 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
|
IRF[International Rectifier]
|
| IRHLF6970Z4 IRHLF6930Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRHLG73214 IRHLG77214 2N7614M1 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
|
International Rectifier
|
| IRHLYS77034CM |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA
|
International Rectifier
|
| IRHLUC730Z4 IRHLUC770Z4 2N7617UC IRHLUC770Z4-15 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
| HCS154HMSR FN3077 HCS151MS HCS151D HCS151DMSR HCS1 |
Multiplexer, Digital, 8-Input, Rad-Hard, High-Speed, CMOS, Logic
Radiation Hardened 4-to-16 Line Decoder/Demultiplexer
From old datasheet system
Radiation Hardened 8-Input Multiplexer
|
INTERSIL[Intersil Corporation]
|
| HCS240MS FN3562 HCS240D HCS240DMSR HCS240HMSR HCS2 |
Radiation Hardened Octal Buffer/Line Driver, Three-State
Driver, Buffer/Line, Inverter, Tri-State, Octal, Rad-Hard, High-Speed, CMOS, Logic
Radiation Hardened Octal Buffer/Line Driver, Three-State(抗辐射八缓冲线驱动器（三态）)
From old datasheet system
Radiation Hardened Octal Buffer/Line Driver/ Three-State
|
INTERSIL[Intersil Corporation]
|
| HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
